Electronic Materials and Devices

EEEN11302 Electronic Materials and Devices 10 Semester 2 Undergraduate Level 1 Huanqing Ye Unit coordinator Matthew Halsall Unit coordinator Aimin Song Unit coordinator Department of Electrical & Electronic Engineering 1 FHEQ level (Framework for Higher Education Qualifications) ' Undefined ' European Credit Transfer & Accumulation System Rating : 5.0 This unit will cover the following topics:<ul><li>Atomic structure, bonding and types of solids, crystal structure;</li><li>Band theory of solids, effective mass, fermi energy, ionisation potential and work function;</li><li>Electrical and thermal conduction in solids, The drude theory of metals, The Hall effect;</li><li>Semiconductors band gaps, holes and electrons, Energy diagrams in k-space (direct and indirect gaps), electrical conduction in semiconductors;</li><li>Intrinsic/Extrinsic semiconductors (n-type and p-type doping), defects in semiconductors, Temperature & impurity dependence of conductivity (drift mobility);</li><li>Diodes, Ebers-Moll equation and diode resistance, Rectifying circuits;</li><li>Field-Effect Transistors (FETs), properties of FET, FET amplifying circuits;</li><li>Bipolar Junction Transistors (BJTs), properties of BJT, BJT amplifying circuits.</li></ul> This unit will cover the following topics:<ul><li>Atomic structure, bonding and types of solids, crystal structure;</li><li>Band theory of solids, effective mass, fermi energy, ionisation potential and work function;</li><li>Electrical and thermal conduction in solids, The drude theory of metals, The Hall effect;</li><li>Semiconductors band gaps, holes and electrons, Energy diagrams in k-space (direct and indirect gaps), electrical conduction in semiconductors;</li><li>Intrinsic/Extrinsic semiconductors (n-type and p-type doping), defects in semiconductors, Temperature & impurity dependence of conductivity (drift mobility);</li><li>Diodes, Ebers-Moll equation and diode resistance, Rectifying circuits;</li><li>Field-Effect Transistors (FETs), properties of FET, FET amplifying circuits;</li><li>Bipolar Junction Transistors (BJTs), properties of BJT, BJT amplifying circuits.</li></ul> The unit aims to:<ul><li>Introduce the basic concepts of material science;</li><li>Describe the different type of atomic bonding in solids and crystal structure; </li><li>Explain the band theory of solids and its connection to metal and semiconductor electrical and thermal properties; </li><li>Explain the principles of amplification using electronic components; </li><li>Describe the characteristics of electronic components and introduce the concept of functional flexibility; </li><li>Explain the benefits of applying negative feedback in circuits using discrete devices.</li></ul> On the successful completion of the course, students will be able to:ILO: Explain fundamentals of atomic bonding and materials science. (Developed and Assessed)ILO 2: Explain the fundamentals of electrical and thermal conduction in metals. (Developed and Assessed)ILO 3: Calculate electrical properties of doped and undoped semiconductors from first principles. (Developed and Assessed)ILO 4: Explain the characteristics of the most fundamental components in electronic circuits:  diodes and transistors. (Developed and Assessed)ILO 5: Design basic diode circuits for different applications. (Developed and Assessed)ILO 6: Design basic BJT and FET transistor circuits. (Developed and Assessed) Pre-recorded videos are provided via CANVAS and are to be watched prior to lectures. These videos are supported by accompanying formative online quizzes.Large group two-hour lectures are held weekly. Lecture material is provided electronically via CANVAS.Two three-hour laboratory sessions are conducted in dry teaching lab, with the support of Teaching Assistants, to reinforce the key concepts covered in the course unit.Bi-weekly small-group tutorials, led by Teaching Assistants, focus on technical discussions related to specific concepts covered in the course unit. 0 Other 10% 1 Written exam 70% 3 Report 20% Written exam: 2 hours Lab-based coursework: 6 hours Bi-weekly tutorial questions: 3 hours Written exam: Exam marks provided following Examination Board. Lab-based coursework: Feedback provided via CANVAS system within three weeks after the submission deadline. Bi-weekly tutorial questions: Feedback provided via CANVAS system within one week after the submission deadline. N Kasap, S.O. (2018). Principles of Electronic Materials and Devices. 4th edn. McGraw-Hill Education. ISBN: 9780078028182.Sze, S.M. and Lee, M.K. (2013). Semiconductor Devices: Physics and Technology. 3rd edn. Wiley. ISBN: 9780470537947. Lectures 22 Practical classes & workshops 6 Tutorials 3 69